Reports

Crystal Structures at High Pressures of Metallic Modifications of Compounds of Indium, Gallium, and Aluminum

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Science  01 Mar 1963:
Vol. 139, Issue 3557, pp. 845-847
DOI: 10.1126/science.139.3557.845

Abstract

X-ray diffraction shows that the high-pressure modifications (at 22 to 130 kilobars) of the antimonides of indium, gallium, and aluminum are analogous to white tin. The arsenide and phosphide of indium transform to NaCl type. The transformation of these semiconductors to their metallic states is empirically related to their energy gap under normal conditions.