Laser Annealing of Ion-Implanted Semiconductors

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Science  04 May 1979:
Vol. 204, Issue 4392, pp. 461-468
DOI: 10.1126/science.204.4392.461


The physical and electrical properties of ion-implanted silicon annealed with high-powered laser radiation are described. Particular emphasis is placed on the comparison of materials properties that can be achieved with laser annealing to those which can be achieved by conventional thermal annealing. Applications of these techniques to the fabrication of high-efficiency solar cells, and potential applications of this new technique to other materials areas are discussed.