New Methods of Processing Silicon Slices

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Science  23 May 1980:
Vol. 208, Issue 4446, pp. 923-926
DOI: 10.1126/science.208.4446.923


Through the use of room-temperature, radio-frequency plasma ionization of gases, the insulating, conducting, and semiconducting materials associated with the fabrication of silicon integrated circuits can be patterned to submicrometer dimensions. A tutorial description is presented of the fabrication techniques used in the past with an overview of where plasma processing has made noteworthy improvements in the lithography of materials.