Articles

Strained-Layer Epitaxy of Germanium-Silicon Alloys

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Science  11 Oct 1985:
Vol. 230, Issue 4722, pp. 127-131
DOI: 10.1126/science.230.4722.127

Abstract

Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics.

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