Articles

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices

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Science  09 Jan 1987:
Vol. 235, Issue 4785, pp. 172-176
DOI: 10.1126/science.235.4785.172

Abstract

Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. The transport properties of electrons and holes can be independently and continuously tuned for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach.