Artificially Structured Thin-Film Materials and Interfaces

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Science  27 Feb 1987:
Vol. 235, Issue 4792, pp. 1023-1028
DOI: 10.1126/science.235.4792.1023


The ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as molecular beam epitaxy and metal-organic chemical vapor deposition has recently led to the observation of unexpected new physical phenomena and to the creation of entirely new classes of devices. In particular, the growth of materials of variable band gap in technologically important semiconductors such as GaAs, InP, and silicon will be reviewed. Recent results of studies of multilayered structures and interfaces based on the use of advanced characterization techniques such as high-resolution transmission electron microscopy and scanning tunneling microscopy will be presented.