High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

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Science  09 Oct 1987:
Vol. 238, Issue 4824, pp. 181-183
DOI: 10.1126/science.238.4824.181


A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.