Synthesis of Buried Oxide and Silicide Layers with Ion Beams

Science  19 Aug 1988:
Vol. 241, Issue 4868, pp. 930-935
DOI: 10.1126/science.241.4868.930


Ion implantation, because it is inherently a strongly nonequilibrium process, can add a new dimension to materials studies. A large variety of chemical elements may be readily introduced into a target substrate by ion bombardment at concentrations considerably greater than the normal solid solubilities. In addition, the interaction of the accelerated ions with the target produces lattice defects. Both effects have been studied extensively in experiments directed at understanding the mechanisms of formation of buried oxide and silicide layers in silicon with high-dose ion implantation. These layers have properties that are difficult to attain with conventional techniques.