Reports

Direct Observation of Dislocation Core Structures in CdTe/GaAs(001)

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Science  28 Jul 1995:
Vol. 269, Issue 5223, pp. 519-521
DOI: 10.1126/science.269.5223.519

Abstract

A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.

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