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Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr0.52Ti0.48)O3/SrRuO3 Heterostructures

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Science  16 May 1997:
Vol. 276, Issue 5315, pp. 1100-1103
DOI: 10.1126/science.276.5315.1100

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Abstract

A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr0.52Ti0.48)O3/SrRuO3heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr0.52Ti0.48)O3layer; the electronic density of the underlying metallic SrRuO3 layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required.

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