Report

Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation

See allHide authors and affiliations

Science  21 Nov 1997:
Vol. 278, Issue 5342, pp. 1444-1447
DOI: 10.1126/science.278.5342.1444

You are currently viewing the abstract.

View Full Text

Log in to view the full text

Log in through your institution

Log in through your institution

Abstract

With the use of scanning tunneling microscopy, it is shown that germanium atoms adsorbed on the (100) surface of silicon near room temperature form chainlike structures that are tilted from the substrate dimer bond direction and that consist of two-atom units arranged in adjoining substrate troughs. These units are distinctly different from surface dimers. They may provide the link missing in our understanding of the elementary processes in epitaxial film growth: the step between monomer adsorption and the initial formation of two-dimensional growth islands.

  • * To whom correspondence should be addressed at lagally{at}engr.wisc.edu

View Full Text