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Enhanced Intergrain Tunneling Magnetoresistance in Half-Metallic CrO2 Films

Science  28 Nov 1997:
Vol. 278, Issue 5343, pp. 1607-1609
DOI: 10.1126/science.278.5343.1607

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Abstract

Low-field tunneling magnetoresistance was observed in films of half-metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.

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