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Dangling Bond Dynamics on the Silicon (100)-2×1 Surface: Dissociation, Diffusion, and Recombination

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Science  23 Jan 1998:
Vol. 279, Issue 5350, pp. 545-548
DOI: 10.1126/science.279.5350.545

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Abstract

The dynamics of dangling bond (DB) diffusion was studied after deuterium desorption from the silicon (100)-2×1 surface. At elevated temperatures, paired DB sites produced after desorption unpaired as deuterium atoms hopped from adjacent dimers. Below 620 kelvin, the unpaired configuration most commonly observed corresponded to two DBs on adjacent silicon dimers. At higher temperatures, unpaired DBs executed one-dimensional walks along the dimer rows, and recombination was observed with the same partner after walks lasting many minutes. The frequency and extent of these excursions increased with temperature. Above 660 kelvin, complete dissociation was observed and was sometimes followed by recombination by means of partner exchange. The implications for low-temperature materials growth are discussed.

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