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Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects

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Science  10 Apr 1998:
Vol. 280, Issue 5361, pp. 262-264
DOI: 10.1126/science.280.5361.262

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Abstract

Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original line. The splittings were an order of magnitude smaller than the lowest single-electron or single-hole excited state energies, indicating that the fine structure results from few-particle interactions in the dot. Calculations of few-particle effects give splittings of the observed magnitude.

  • * Present address: Department of Electrical Engineering, University of Virginia, Thornton Hall, Charlottesville, VA 22903–2442, USA.

  • To whom correspondence should be addressed. E-mail: mats-erik.pistol{at}ftf.lth.se

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