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Room Temperature-Operating Spin-Valve Transistors Formed by Vacuum Bonding

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Science  17 Jul 1998:
Vol. 281, Issue 5375, pp. 407-409
DOI: 10.1126/science.281.5375.407

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Abstract

Functional integration between semiconductors and ferromagnets was demonstrated with the spin-valve transistor. A ferromagnetic multilayer was sandwiched between two device-quality silicon substrates by means of vacuum bonding. The emitter Schottky barrier injected hot electrons into the spin-valve base. The collector Schottky barrier accepts only ballistic electrons, which makes the collector current very sensitive to magnetic fields. Room temperature operation was accomplished by preparing Si-Pt-Co-Cu-Co-Si devices. The vacuum bonding technique allows the realization of many ideas for vertical transport devices and forms a permanent link that is useful in demanding adhesion applications.

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