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Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

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Science  14 Aug 1998:
Vol. 281, Issue 5379, pp. 969-971
DOI: 10.1126/science.281.5379.969

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Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

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