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A Capacitance Standard Based on Counting Electrons

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Science  10 Sep 1999:
Vol. 285, Issue 5434, pp. 1706-1709
DOI: 10.1126/science.285.5434.1706

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Abstract

A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements ofC = NeV with this method have a relative standard deviation of 0.3 × 10–6. This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.

  • * To whom correspondence should be addressed. E-mail: mark.keller{at}boulder.nist.gov

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