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All-Inorganic Field Effect Transistors Fabricated by Printing

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Science  22 Oct 1999:
Vol. 286, Issue 5440, pp. 746-749
DOI: 10.1126/science.286.5440.746

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Abstract

A solution of cadmium selenide nanocrystals was used to print inorganic thin-film transistors with field effect mobilities up to 1 square centimeter per volt second. This mobility is an order of magnitude larger than those reported for printed organic transistors. A field effect was achieved by developing a synthesis that yielded discretely sized nanocrystals less than 2 nanometers in size, which were free of intimately bound organic capping groups. The resulting nanocrystal solution exhibited low-temperature grain growth, which formed single crystal areas encompassing hundreds of nanocrystals. This process suggests a route to inexpensive, all-printed, high-quality inorganic logic on plastic substrates.

  • * To whom correspondence should be addressed. E-mail: jacobson{at}media.mit.edu

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