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Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors

Science  29 Oct 1999:
Vol. 286, Issue 5441, pp. 945-947
DOI: 10.1126/science.286.5441.945

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Abstract

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C6H5C2H4NH3)2SnI4form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 104. Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

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