Not as Far to Go, But Longer to Get There

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Science  05 May 2000:
Vol. 288, Issue 5467, pp. 773
DOI: 10.1126/science.288.5467.773f

Shrinking the size of devices has been the method of choice in microelectronics (it has led to improvements in on-chip device densities with a commensurate increase in speed) and is a trend that is likely to continue. Fischetti and Laux, however, call into question the perceived improvements in device performance as dimensions become smaller. Their device modeling study shows that for transistors with conduction channels shorter than 40 nanometers and an oxide layer less than 2.5 nm, the close proximity of the conduction channel to the heavily doped source and drain contact regions is detrimental to electron transport in the channel; this effectively slows electron motion and leads to an overall reduction in device performance.—ISO

Appl. Phys. Lett.76, 2277 (2000).

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