MATERIALS SCIENCE: Making Subsurface Diamonds

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Science  26 May 2000:
Vol. 288, Issue 5470, pp. 1301c-1301
DOI: 10.1126/science.288.5470.1301c

Ion beam implantation is used in the fabrication of silicon devices; for example, in the SIMOX process, implanted oxygen ions are used to create buried insulating layers of silicon dioxide. Heera et al. have studied the implantation of carbon ions (C) into single crystals of silicon carbide (SiC) at elevated temperatures; high temperatures should help relieve the huge lattice strains caused by the implanted ions. At 300C, high ion doses formed amorphous carbon, and at 600C graphite formed. However, at 900C, small grains of diamond formed (between 2 and 5 nanometers in size), as verified by selected-area electron diffraction. The authors suggest that the tetrahedral coordination of SiC acts as a template for diamond formation.PDS

Appl. Phys. Lett.76, 2847 (2000).

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