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Fractional Quantum Hall Effect in Organic Molecular Semiconductors

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Science  30 Jun 2000:
Vol. 288, Issue 5475, pp. 2338-2340
DOI: 10.1126/science.288.5475.2338

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Abstract

High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 104 square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov–de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 1011 per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as ∼2 kelvin.

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