Applied Physics

High-Performance Power Devices

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Science  01 Dec 2000:
Vol. 290, Issue 5497, pp. 1653
DOI: 10.1126/science.290.5497.1653c

Wide band gap semiconductors such as gallium nitride (GaN) are used in power electronics applications where the elevated operating temperatures preclude the use of lower band gap silicon-based devices, which would be hampered by high leakage currents. The GaN field-effect transistors made so far have shown good initial switching characteristics, but high-temperature operation has been hampered by various problems with the insulating oxide layers. In the search for a stable dielectric layer, Johnson et al. present findings that suggest that single-crystal gadolinium oxide (Gd2O3) is an attractive candidate for tackling this problem. They grow the oxide epitaxially on GaN and show in a device configuration that low interface defect density, low parasitic resistance, and low contact resistance all lead to improved performance. — ISO

Appl. Phys. Lett. 77, 3230 (2000).

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