Materials Science

Thrown for a Dislocation

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Science  01 Dec 2000:
Vol. 290, Issue 5497, pp. 1655
DOI: 10.1126/science.290.5497.1655c

Dislocations not only affect the mechanical properties of materials but also can affect the performance of semiconductor devices, especially in cases where islands or thin films can relieve strain through the movement of dislocations. Liu et al. used transmission electron microscopy to image the movement of dislocations in cobalt silicide (CoSi2) islands (about 1 micrometer in diameter) grown on the (111) surface of silicon. At elevated temperatures (850°C), they observed glide dislocations nucleating at the island edge and then moving along planes parallel to the (111) interface. They were able to reproduce the dynamics of these dislocation networks quite accurately in simulations: line tension forces and interactions between dislocations both were important factors while “image” forces, which take into account the particle shape and interaction with the substrate but add greatly to the complexity of the calculation, provided only a minor contribution.— PDS

Phys. Rev. Lett. 85, 4088 (2000).

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