Report

Room-Temperature Ultraviolet Nanowire Nanolasers

Science  08 Jun 2001:
Vol. 292, Issue 5523, pp. 1897-1899
DOI: 10.1126/science.1060367

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Abstract

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

  • * To whom correspondence should be addressed. E-mail: pyang{at}cchem.berkeley.edu

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