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Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires

Science  24 Aug 2001:
Vol. 293, Issue 5534, pp. 1455-1457
DOI: 10.1126/science.1062340

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Abstract

We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively explained in terms of the large dielectric contrast between these free-standing nanowires and surrounding environment, as opposed to quantum confinement effects. This intrinsic anisotropy was used to create polarization-sensitive nanoscale photodetectors that may prove useful in integrated photonic circuits, optical switches and interconnects, near-field imaging, and high-resolution detectors.

  • * These authors contributed equally to this work.

  • To whom correspondence should be addressed. E-mail: cml{at}cmliris.harvard.edu

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