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Observation of Charge Transport by Negatively Charged Excitons

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Science  26 Oct 2001:
Vol. 294, Issue 5543, pp. 837-839
DOI: 10.1126/science.1064847

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Abstract

We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The Xmobility is found to be as high as 6.5 × 104cm2 V−1 s−1. The results demonstrate that X exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.

  • * To whom correspondence should be addressed. E-mail: andrew.shields{at}crl.toshiba.co.uk

  • Present address: School of Physics, University of New South Wales, Sydney 2052, Australia.

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