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Logic Circuits with Carbon Nanotube Transistors

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Science  09 Nov 2001:
Vol. 294, Issue 5545, pp. 1317-1320
DOI: 10.1126/science.1065824

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Abstract

We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>105), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.

  • * Present address: Laboratoire de Physique de la Matière Condensée, École Normale Superieure, 24 Rue Lhomond, 75005 Paris, France.

  • To whom correspondence should be addressed. E-mail: dekker{at}mb.tn.tudelft.nl

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