PerspectiveMaterials Science

Orienting Ferroelectric Films

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Science  14 Jun 2002:
Vol. 296, Issue 5575, pp. 1975-1976
DOI: 10.1126/science.1072855

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Summary

Achieving a new generation of microelectronic devices requires combining silicon with materials, such as ferroelectrics that allow the development of, for example, high density, nonvolatile memories. Ramesh and Schlom describe work ( Lee et al.) showing that a class of ferroelectrics that has been particularly challenging to grow, can be grown as a thin film on a silicon substrate with the optimal crystallographic orientation for nonvolatile ferroelectric memories.