Report

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Science  06 Sep 2002:
Vol. 297, Issue 5587, pp. 1670-1672
DOI: 10.1126/science.1074374

You are currently viewing the abstract.

View Full Text

Via your Institution

Log in through your institution

Log in through your institution


Abstract

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements onp-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

  • * Present address: Division for Electricity Research, Box 539, S-751 21 Uppsala University, Sweden. E-mail: jan.isberg{at}angstrom.uu.se

View Full Text