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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Science  23 May 2003:
Vol. 300, Issue 5623, pp. 1269-1272
DOI: 10.1126/science.1083212

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Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼106 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

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