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Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films

Science  05 Nov 2004:
Vol. 306, Issue 5698, pp. 1005-1009
DOI: 10.1126/science.1103218

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Abstract

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

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