Applied Physics

Registering Nanostructures

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Science  12 Nov 2004:
Vol. 306, Issue 5699, pp. 1103
DOI: 10.1126/science.306.5699.1103b

The manipulation of atoms using scanning tunneling microscopy (STM) has long promised the ability to fabricate nanometer- and atomic-scale electronic device structures. However, the realization of robust devices has been a difficult goal to attain simply because of the engineering problem of making electrical contact to the fabricated structure. The problem is that once the sample is removed from the ultrahigh vacuum where the STM atomic manipulation has taken place, the actual location of the structure is lost, particularly those regions that are buried under several layers of epitaxially grown semiconductor material. Ruess et al. have used a registration technique that allows the alignment of macroscopic electrodes to the nanoscale device elements buried underneath. The registration markers are etched into the substrate before the STM manipulation stage and so should be a general method for bottom-up fabrication of other nanoscale device structures. — ISO

Nano Lett. 4, 1969 (2004).

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