Research Article

Observation of the Spin Hall Effect in Semiconductors

See allHide authors and affiliations

Science  10 Dec 2004:
Vol. 306, Issue 5703, pp. 1910-1913
DOI: 10.1126/science.1105514

You are currently viewing the abstract.

View Full Text


Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

View Full Text