Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures

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Science  29 Sep 2006:
Vol. 313, Issue 5795, pp. 1942-1945
DOI: 10.1126/science.1131091

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We report on a large electric-field response of quasi–two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi–two-dimensional electron gases and therefore present an oxide analog to semiconducting high–electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.

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