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Coherent Electronic Fringe Structure in Incommensurate Silver-Silicon Quantum Wells

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Science  03 Nov 2006:
Vol. 314, Issue 5800, pp. 804-806
DOI: 10.1126/science.1132941

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Abstract

Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.

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