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Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction

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Science  10 Nov 2006:
Vol. 314, Issue 5801, pp. 974-977
DOI: 10.1126/science.1133781

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Abstract

Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent “dry” chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.

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