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An Atomic Seesaw Switch Formed by Tilted Asymmetric Sn-Ge Dimers on a Ge (001) Surface

Science  23 Mar 2007:
Vol. 315, Issue 5819, pp. 1696-1698
DOI: 10.1126/science.1137848

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Abstract

When tin (Sn) atoms are deposited on a clean germanium (Ge) (001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge-dimer position. We identified the dimer as a heterogeneous Sn-Ge dimer by reversing its buckling orientation with a scanning tunneling microscope (STM) at 80 kelvin. An atomic seesaw switch was formed for one-dimensional electronic conduction in the Ge dimer–row direction by using the STM to reversibly flip the buckling orientation of the Sn-Ge dimer and to set up standing-wave states.

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