Report

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

Science  03 Aug 2007:
Vol. 317, Issue 5838, pp. 638-641
DOI: 10.1126/science.1144657

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Abstract

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and Embedded Image times the quantum of conductance, e2/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

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