Chemistry

Filming Chalcogenides

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Science  23 Jan 2009:
Vol. 323, Issue 5913, pp. 438
DOI: 10.1126/science.323.5913.438a

In atomic layer deposition (ALD), thin films are deposited with two alternating chemical reactions. Because both reactions stop once they have exhausted the reactive groups on the surface, growth rates are highly controlled. Extending ALD growth to new materials systems requires the identification of fast reactions that saturate and that avoid the use of highly toxic reagents. Pore et al. report an ALD route for the growth of metal tellurides and selenides, which include germanium antimony telluride (GST), a material used in phase-change memories; and copper indium selenide, a photovoltaic material. Bis(trialkylsilyl) compounds of Te and Se can be used with metal salts of Ge, Sb, and Cu, as well as other metals, to grow films in a controlled manner. GST films could be grown by mixing the precursor metal chlorides, and in the case of copper, the use of copper(II) pivalate allowed for temperature-controlled tuning of the film stoichiometry. — PDS

J. Am. Chem. Soc. 131, 10.1021/ja8090388 (2009).

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