Research Article

Oxide Nanoelectronics on Demand

See allHide authors and affiliations

Science  20 Feb 2009:
Vol. 323, Issue 5917, pp. 1026-1030
DOI: 10.1126/science.1168294

You are currently viewing the abstract.

View Full Text

Log in to view the full text

Log in through your institution

Log in through your institution

Abstract

Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi–two-dimensional electron gas at a lanthanum aluminate–strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.

View Full Text