Research Article

Oxide Nanoelectronics on Demand

Science  20 Feb 2009:
Vol. 323, Issue 5917, pp. 1026-1030
DOI: 10.1126/science.1168294

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Abstract

Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi–two-dimensional electron gas at a lanthanum aluminate–strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.

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