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Control of Spin Precession in a Spin-Injected Field Effect Transistor

Science  18 Sep 2009:
Vol. 325, Issue 5947, pp. 1515-1518
DOI: 10.1126/science.1173667

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Abstract

Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.

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