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100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Science  05 Feb 2010:
Vol. 327, Issue 5966, pp. 662
DOI: 10.1126/science.1184289

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Abstract

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

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