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Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide

Science  27 May 2011:
Vol. 332, Issue 6033, pp. 1065-1067
DOI: 10.1126/science.1202152

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Abstract

The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field–induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O2, by means of electric double-layer gating with high-density electron accumulation (>1014 per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.

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