ENGINEERING

Growing Graphene Receivers

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Science  14 Feb 2014:
Vol. 343, Issue 6172, pp. 710
DOI: 10.1126/science.343.6172.710-b
CREDIT: S. HAN ET AL., NATURE COMMUNICATIONS 5, 3086 (30 JANUARY 2014) © 2014 NATURE PUBLISHING GROUP

One use of the extremely high conductivity of graphene is in radio-frequency (RF) applications. However, the devices they use require specialized fabrication methods to avoid damaging the active graphene channel layer. Conventional fabrication of practical RF devices starts by placing the channel material on a silicon substrate and then fabricating other passive device components on top of it, using deposition steps that can involve high temperatures that can degrade the device performance. Han et al. report on a fabrication scheme for a graphene RF receiver that first assembles the passive elements on a silicon substrate. After metal lines were fabricated, atomic layer deposition was used to deposit a thin alumina gate dielectric layer, and the active graphene was grown through a chemical vapor deposition process. None of the processing steps required temperatures in excess of 400°C. The final device, which contains three GFETs transistors, four inductors, two capacitors, and two resistors in a 0.6-mm-square area, operates at 4.3 gigahertz and could receive and restore digital text transmitted with that carrier frequency.

Nat. Commun. 10.1038/ncomms4086 (2014).

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