Photonic doping of epsilon-near-zero media

See allHide authors and affiliations

Science  10 Mar 2017:
Vol. 355, Issue 6329, pp. 1058-1062
DOI: 10.1126/science.aal2672

You are currently viewing the abstract.

View Full Text

Doped photonics

Doping semiconductor materials with impurity atoms enables control of the optoelectronic properties that enhance functionality. Liberal et al. describe numerically and experimentally an analogous doping effect for a group of photonic materials. They introduced a dielectric into an otherwise nonmagnetic material, which produced a magnetic response. The generality of the method should allow the design of photonic materials with enhanced and controlled electromagnetic response.

Science, this issue p. 1058


Doping a semiconductor with foreign atoms enables the control of its electrical and optical properties. We transplant the concept of doping to macroscopic photonics, demonstrating that two-dimensional dielectric particles immersed in a two-dimensional epsilon-near-zero medium act as dopants that modify the medium’s effective permeability while keeping its effective permittivity near zero, independently of their positions within the host. The response of a large body can be tuned with a single impurity, including cases such as engineering perfect magnetic conductor and epsilon-and-mu-near-zero media with nonmagnetic constituents. This effect is experimentally demonstrated at microwave frequencies via the observation of geometry-independent tunneling. This methodology might provide a new pathway for engineering electromagnetic metamaterials and reconfigurable optical systems.

View Full Text