Scalable h-BN sheets

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Science  09 Feb 2018:
Vol. 359, Issue 6376, pp. 649
DOI: 10.1126/science.359.6376.649-a

Large-area hexagonal boron nitride nanomesh can be grown on a single-crystalline rhodium thin film substrate (shown here).

PHOTO: H. CUN ET AL., NANO LETT. 10.1021/ACS.NANOLETT.7B04752 (2018)

Growth of two-dimensional material in situ is a scalable route for device production, especially if the films can be transferred to another substrate. Cun et al. grew single crystals of hexagonal boron nitride (h-BN) on ∼10-cm rhodium films supported on silicon wafers. After electrochemical treatment with an organic acid and spin-coating with a polymer layer, the h-BN was electrochemically exfoliated by generating hydrogen bubbles at the rhodium surface. These films could be transferred onto a germanium surface to prevent their high-temperature oxidation. Films in which nanovoids had been introduced into h-BN functioned as freestanding membranes after removal of the polymer support.

Nano Lett. 10.1021/acs.nanolett.7b04752 (2018).

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