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Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

Science  17 May 2012:

DOI: 10.1126/science.1220527

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Abstract

Despite several years of research into graphene electronics, sufficient Ion/Ioff in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), where the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volts by adjusting graphene’s work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

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