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Resonantly driven CNOT gate for electron spins

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Science  07 Dec 2017:
eaao5965
DOI: 10.1126/science.aao5965

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Abstract

Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging owing to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and readout). Our quantum dot device architecture enables multi-qubit algorithms in silicon.

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